j. cx , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC5002 description ? collector-emitter breakdown voltage- : v(br)ceo= 800v(min) ? high switching speed applications ? designed for display horizontal deflection output.switching regulator and general purpose applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tc=25"c junction temperature storage temperature value 1500 800 6 7 14 3.5 80 150 -55-150 unit v v v a a a w c c 1 ^ iii pin 1 base i 1 j 2.collector 1 i 1 3. emitter ' ' r to-3pml package 1 ^ -? j ?^ b i a 'i- ?? f -~ c *~ ? *s~ f_ 1 ' ' a u ., .i.',. ?,.^y^, * '' "" '"' ?^- ?* g * ^l dim a b c d f g h j k l n 0 r s u v mm min 19.90 15.90 5.50 0.90 3.30 2,90 5.90 0.595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 z i 1.90 max 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0.605 22,50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 n.i sciiii-coikluclors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to he both accurate and reliable at the time o to press. i lowever. n.i semi-coiuluctors assumes no responsibility lor anv errors or omissions discovered in ils use n.i semi-conductors encourages customers to verily that datasheets i\k current before placing orders. quality semi-conductors
silicon npn power transistor 2SC5002 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iebo hpe-t hfe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions lc= 10rna; ib= 0 ic=5a;ib= 1.2a lc=5a; ib=1.2a vcb= 1200v; ie=0 vcb= 1500v; ie=0 veb= 6v; lc= 0 lc=1a;vce=5v lc=5a;vce=5v ie=0; vcb=10v;f=1mhz ie= -0.5a; vce= 12v min 800 8 4 typ. 100 4 max 5.0 1.5 0.1 1.0 0.1 9 unit v v v ma ma pf mhz switching times *stg tf storage time fall time lc= 4a; ib1= 0.8a; ib2=-1.6a; vcc= 200v; rl= 50 3 4.0 0.2 y s u s
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